View STB155N3H6_9100280.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

may 2011 doc id 018793 rev 2 1/ 18 STB155N3H6 std155n3h6 n-channel 30 v, 2.5 m , 80 a, d2pak, dpak stripfet? vi deepgate? power mosfet features r ds(on) * q g industry benchmark extremely low on-resistance r ds(on) high avalanche ruggedness application switching applications automotive description these devices are 30 v n-channel power mosfets realized using st`s proprietary stripfet? vi technology. the resulting power mosfet exhibits the lowest r ds(on) in all packages. figure 1. internal schematic diagram order codes v dss r ds(on) max i d STB155N3H6 30 v < 3 m 80 a (1) 1. limited by wire bonding std155n3h6 30 v < 3 m 80 a (1) dpak 1 3 1 3 d2pak am01474v1 d (tab or 2) g(1) s ( 3 ) table 1. device summary order codes marking package packaging STB155N3H6 155n3h6 d2pak tape and reel std155n3h6 dpak www.st.com
contents STB155N3H6, std155n3h6 2/ doc id 018793 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
STB155N3H6, std155n3 h6 electrical ratings doc id 018793 rev 2 3/ 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v gs gate-source voltage 20 v i d (1) 1. limited by wire bonding drain current (continuous) at t c = 25 c 80 a i d drain current (continuous) at t c = 100 c 80 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 320 a p tot total dissipation at t c = 25 c 110 w derating factor 0.73 w/c t stg storage temperature -55 to 175 c t j operating junction temperature c table 3. thermal resistance symbol parameter value unit d2 pak dpak r thj-case thermal resistance junction-case max 1.36 c/w r thj-pcb (1) 1. when mounted on 1 inch2 2 oz cu board thermal resistance junction-pcb max 35 50 c/w table 4. avalanche characteristics symbol parameters value unit i av not-repetitive avalanche current 40 a e as single pulse avalanche energy (starting t j = 25 c, i d = i av , v dd = 22 v) 525 mj
electrical characteristics STB155N3H6, std155n3h6 4/ doc id 018793 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. static symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = 20 v v ds = 20 v,tc = 125 c 1 100 a na i gss gate body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 40 a 2.5 3.0 m table 6. dynamic symbol parameter test conditions min typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f=1 mhz, v gs = 0 - 3650 765 390 - pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 15 v, i d = 80 a v gs = 10 v figure 14 - 62 17 16 - nc nc nc r g intrinsic gate resistance f = 1 mhz open drain - 1.5 -
STB155N3H6, std155n3h6 elec trical characteristics doc id 018793 rev 2 5/ table 7. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 15 v, i d = 40 a, r g = 4.7 , v gs = 10 v (see figure 13 ) - 20 90 - ns ns t d(off) t f turn-off delay time fall time - 50 20 - ns ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 80 320 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 80 a, v gs = 0 - 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 80 a, di/dt = 100 a/s, v dd = 24 v, t j = 150 c (see figure 15 ) - 40 50 2.5 ns nc a
electrical characteristics STB155N3H6, std155n3h6 6/ doc id 018793 rev 2 2.1 electrical characterist ics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on resistance i d 100 10 1 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 100 s 1m s 10m s tj=175c tc=25c s ingle p u l s e am09149v1 i d 150 100 50 0 0 0.5 v d s (v) 1.5 (a) 1.0 200 250 5v 6v 4v v g s =10v am09150v1 i d 150 100 50 0 0 2 v g s (v) 4 (a) 1 3 5 200 250 6 v d s =1v am09151v1 bv d ss -75 t j (c) (norm) -25 75 25 125 0. 8 0 0. 8 5 0.90 1.00 1.05 1.10 175 0.95 i d =1ma am09152v1 r d s (on) 2.0 1.5 1.0 0.5 0 40 i d (a) (m ) 20 60 2.5 3 .0 3 .5 v g s =10v 8 0 am0915 3 v1
STB155N3H6, std155n3h6 elec trical characteristics doc id 018793 rev 2 7/ figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics v g s 6 4 2 0 0 3 0 q g (nc) (v) 60 8 40 50 10 v dd =15v i d = 8 a 70 12 20 10 am09154v1 c 1000 0 10 v d s (v) (pf) 5 15 ci ss co ss cr ss 100 20 25 am09155v1 v g s (th) 0.6 0.4 0.2 0 -75 t j (c) (norm) -25 0. 8 75 25 125 1.0 1.2 i d =250 a 175 am09156v1 r d s (on) 0.6 0.4 0.2 0 -75 t j (c) (norm) -25 75 25 175 125 1.2 1.0 0. 8 1. 8 1.6 1.4 i d =40a v g s =10v am09157v1 v s d 0 40 i s d (a) (v) 20 60 8 0 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 t j =-55c t j =175c t j =25c am0915 8 v1
test circuits STB155N3H6, std155n3h6 8/ doc id 018793 rev 2 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive wavefor m figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STB155N3H6, std155n3h6 package mechanical data doc id 018793 rev 2 9/ 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STB155N3H6, std155n3h6 10/ doc id 018793 rev 2 table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a 4.40 4.60 a1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 d 8.95 9.35 d1 7.50 e10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h15 15.85 j1 2.49 2.69 l 2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
STB155N3H6, std155n3h6 package mechanical data doc id 018793 rev 2 11/ figure 19. d2pak footprint (a) figure 20. d2pak (to-263) drawing a. all dimension ar e in millimeters 16.90 12.20 9.75 3 .50 5.0 8 1.60 footprint 0079457_r
package mechanical data STB155N3H6, std155n3h6 12/ doc id 018793 rev 2 figure 21. dpak footprint (b) table 10. dpak (to-252) mechanical data dim. mm min. typ. max. a 2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 d1 5.10 e 6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h9.35 10.10 l 1 1.50 l1 2.80 l2 0.80 l4 0.60 1 r0.20 v2 0 8 b. all dimension ar e in millimeters 6.7 1.6 1.6 2. 3 2. 3 6.7 1. 8 3 am0 88 50v1
STB155N3H6, std155n3h6 package mechanical data doc id 018793 rev 2 13/ figure 22. dpak (to-252) drawing 006 8 772_h
packaging mechanical data STB155N3H6, std155n3h6 14/ doc id 018793 rev 2 5 packaging mechanical data table 11. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
STB155N3H6, std155n3h6 pa ckaging mechanical data doc id 018793 rev 2 15/ table 12. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d1.5 1.6d20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3
packaging mechanical data STB155N3H6, std155n3h6 16/ doc id 018793 rev 2 figure 23. tape for d2pak (to-263) and dpak (to-252) figure 24. reel for d2pak (to-263) and dpak (to-252) p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us top cover t a pe am0 88 52v2 a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
STB155N3H6, std155n3h6 revision history doc id 018793 rev 2 17/ 6 revision history table 13. document revision history date revision changes 03-may-2011 1 first release. 11-may-2011 2 document status promoted from preliminary data to datasheet.
STB155N3H6, std155n3h6 18/ doc id 018793 rev 2 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2011 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

▲Up To Search▲

Price & Availability of STB155N3H6

	To Download STB155N3H6 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .